JPS6231506B2 - - Google Patents

Info

Publication number
JPS6231506B2
JPS6231506B2 JP52110724A JP11072477A JPS6231506B2 JP S6231506 B2 JPS6231506 B2 JP S6231506B2 JP 52110724 A JP52110724 A JP 52110724A JP 11072477 A JP11072477 A JP 11072477A JP S6231506 B2 JPS6231506 B2 JP S6231506B2
Authority
JP
Japan
Prior art keywords
gate
insulating film
source
drain
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP52110724A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5444482A (en
Inventor
Takeya Ezaki
Oonori Ishikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP11072477A priority Critical patent/JPS5444482A/ja
Publication of JPS5444482A publication Critical patent/JPS5444482A/ja
Publication of JPS6231506B2 publication Critical patent/JPS6231506B2/ja
Priority to JP20610190A priority patent/JPH03129740A/ja
Priority to JP20610090A priority patent/JPH03129741A/ja
Granted legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
JP11072477A 1977-09-14 1977-09-14 Mos type semiconductor device and its manufacture Granted JPS5444482A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP11072477A JPS5444482A (en) 1977-09-14 1977-09-14 Mos type semiconductor device and its manufacture
JP20610190A JPH03129740A (ja) 1977-09-14 1990-08-02 Ｍｏｓ型半導体装置の製造方法
JP20610090A JPH03129741A (ja) 1977-09-14 1990-08-02 Ｍｏｓ型半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11072477A JPS5444482A (en) 1977-09-14 1977-09-14 Mos type semiconductor device and its manufacture

Related Child Applications (3)

Application Number Title Priority Date Filing Date
JP63124323A Division JPH0618214B2 (ja) 1988-05-20 1988-05-20 Ｍｏｓ型半導体装置の製造方法
JP20610090A Division JPH03129741A (ja) 1977-09-14 1990-08-02 Ｍｏｓ型半導体装置の製造方法
JP20610190A Division JPH03129740A (ja) 1977-09-14 1990-08-02 Ｍｏｓ型半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5444482A JPS5444482A (en) 1979-04-07
JPS6231506B2 true JPS6231506B2 (en]) 1987-07-08

Family

ID=14542873

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11072477A Granted JPS5444482A (en) 1977-09-14 1977-09-14 Mos type semiconductor device and its manufacture

Country Status (1)

Country Link
JP (1) JPS5444482A (en])

Families Citing this family (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4234362A (en) * 1978-11-03 1980-11-18 International Business Machines Corporation Method for forming an insulator between layers of conductive material
JPS5621369A (en) * 1979-07-31 1981-02-27 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacture of semiconductor
JPS56144553A (en) * 1980-04-11 1981-11-10 Hitachi Ltd Manufacture of semiconductor device
US5202574A (en) * 1980-05-02 1993-04-13 Texas Instruments Incorporated Semiconductor having improved interlevel conductor insulation
JPS5799775A (en) * 1980-12-12 1982-06-21 Toshiba Corp Manufacture of semiconductor device
JPS5818965A (ja) * 1981-07-28 1983-02-03 Toshiba Corp 半導体装置の製造方法
US4366613A (en) * 1980-12-17 1983-01-04 Ibm Corporation Method of fabricating an MOS dynamic RAM with lightly doped drain
JPS57106169A (en) * 1980-12-24 1982-07-01 Fujitsu Ltd Manufacture of semiconductor device
JPS57143846A (en) * 1981-02-27 1982-09-06 Fujitsu Ltd Formation of multi-layer wiring compostion
JPH0618211B2 (ja) * 1981-07-07 1994-03-09 日本電気株式会社 半導体装置の製造方法
JPS5830161A (ja) * 1981-08-17 1983-02-22 Toshiba Corp Ｍｉｓ型半導体装置の製造方法
CA1197926A (en) * 1981-12-16 1985-12-10 William D. Ryden Zero drain overlap and self-aligned contacts and contact methods for mod devices
JPS595645A (ja) * 1982-07-01 1984-01-12 Fujitsu Ltd 半導体装置の製造方法
JPS5933829A (ja) * 1982-08-20 1984-02-23 Hitachi Ltd 半導体装置の製造方法
US4566175A (en) * 1982-08-30 1986-01-28 Texas Instruments Incorporated Method of making insulated gate field effect transistor with a lightly doped drain using oxide sidewall spacer and double implantations
JPS5946084A (ja) * 1982-09-09 1984-03-15 Mitsubishi Electric Corp 電界効果型トランジスタおよびその製造方法
JPS5951587A (ja) * 1982-09-17 1984-03-26 Mitsubishi Electric Corp Ｍｏｓ電界効果型トランジスタの製造方法
JPS5952878A (ja) * 1982-09-20 1984-03-27 Fujitsu Ltd 半導体装置の製造方法
JPS5961182A (ja) * 1982-09-30 1984-04-07 Toshiba Corp 半導体装置の製造方法
JPS5972759A (ja) * 1982-10-20 1984-04-24 Toshiba Corp 半導体装置の製造方法
JPS59154040A (ja) * 1983-02-22 1984-09-03 Toshiba Corp 半導体装置の製造方法
JPH0636425B2 (ja) * 1983-02-23 1994-05-11 テキサス インスツルメンツ インコ−ポレイテツド Ｃｍｏｓ装置の製造方法
JP2550302B2 (ja) * 1983-07-27 1996-11-06 株式会社東芝 半導体装置の製造方法
JPS6059777A (ja) * 1983-09-13 1985-04-06 Nec Corp 半導体装置の製造方法
JPH0642481B2 (ja) * 1984-04-27 1994-06-01 ソニー株式会社 半導体装置の製法
JPS6110278A (ja) * 1984-06-26 1986-01-17 Nec Corp Ｍｏｓ型半導体装置及びその製造方法
JPH0810726B2 (ja) * 1984-07-06 1996-01-31 株式会社東芝 半導体装置の製造方法
JPS6142960A (ja) * 1984-08-07 1986-03-01 Toshiba Corp 半導体装置の製造方法
JPS6185823A (ja) * 1984-10-03 1986-05-01 Nec Corp 半導体装置
JPS60121771A (ja) * 1984-11-09 1985-06-29 Hitachi Ltd 半導体装置
JPS61123181A (ja) * 1984-11-15 1986-06-11 Fujitsu Ltd 半導体装置の製造方法
JPS61183967A (ja) * 1985-02-08 1986-08-16 Toshiba Corp 半導体装置の製造方法
JPS61183954A (ja) * 1985-02-08 1986-08-16 Toshiba Corp 読み出し専用半導体記憶装置の製造方法
JPS61183953A (ja) * 1985-02-08 1986-08-16 Toshiba Corp 読み出し専用半導体記憶装置
JPS6237960A (ja) * 1985-08-13 1987-02-18 Toshiba Corp 読み出し専用半導体記憶装置の製造方法
JPS6237961A (ja) * 1985-08-13 1987-02-18 Toshiba Corp 読み出し専用半導体記憶装置
JPS6240764A (ja) * 1985-08-15 1987-02-21 Toshiba Corp 読み出し専用半導体記憶装置およびその製造方法
JPS6240763A (ja) * 1985-08-15 1987-02-21 Toshiba Corp 読み出し専用半導体記憶装置およびその製造方法
JPS6240765A (ja) * 1985-08-15 1987-02-21 Toshiba Corp 読み出し専用半導体記憶装置およびその製造方法
JPS62229976A (ja) * 1986-03-31 1987-10-08 Toshiba Corp 半導体装置およびその製造方法
JPH0831602B2 (ja) * 1986-06-30 1996-03-27 沖電気工業株式会社 Ｍｉｓ型電界効果トランジスタの製造方法
JPS6432650A (en) * 1988-04-01 1989-02-02 Hitachi Ltd Manufacture of semiconductor device
JPH0618214B2 (ja) * 1988-05-20 1994-03-09 松下電器産業株式会社 Ｍｏｓ型半導体装置の製造方法
JPH04354137A (ja) * 1991-05-31 1992-12-08 Mitsubishi Electric Corp 半導体装置およびその製造方法
JPH05160146A (ja) * 1991-12-05 1993-06-25 Sharp Corp 半導体装置の製造方法
US5675168A (en) * 1994-04-01 1997-10-07 Matsushita Electric Industrial Co., Ltd. Unsymmetrical MOS device having a gate insulator area offset from the source and drain areas, and ESD protection circuit including such a MOS device
US5518945A (en) * 1995-05-05 1996-05-21 International Business Machines Corporation Method of making a diffused lightly doped drain device with built in etch stop

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5917866B2 (ja) * 1975-12-29 1984-04-24 松下電器産業株式会社 ハンドウタイソウチノセイゾウホウホウ

Also Published As

Publication number Publication date
JPS5444482A (en) 1979-04-07

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